力晶：公告本公司取得日本專利局核發JP 5261059專利

第七條　第8款

1.專利、商標、著作或其他智慧財產權之內容:NONVOLATILE SEMICONDUCTOR

MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

2.專利、商標、著作或其他智慧財產權之取得日期:102/05/02

3.取得專利、商標、著作或其他智慧財產權之成本:NT＄ 145,722

4.其他應敘明事項:

(1)專利全名：NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, METHOD OF

CONTROLLING THE SAME, DATA COMPRESSION CIRCUIT,

DATA DECOMPRESSION CIRCUIT, AND DATA COMPRESSION

AND DECOMPRESSION CIRCUIT

(2)專利摘要：

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor

memory device which stores adjustment data such as trim data and

a program code in the IC chip of the nonvolatile semiconductor

memory device by markedly compressing the data quantity compared

to a technique in the prior art and decompresses and takes out

the adjustment data etc. by a simple method, and to provide a

method of controlling the same.

SOLUTION: The nonvolatile semiconductor memory device is provided

with: a nonvolatile memory cell array consisting of a plurality

of memory cells and including a body memory cell and an auxiliary

memory cell; and a control circuit which controls writing of data

to the memory cell array and reading of the data from the memory

cell array. The control circuit inputs data compressed by a

predetermined compression method from an external device and

stores them in the auxiliary memory cell. Thereafter, the control

circuit reads the compressed data from the auxiliary memory cell

at a predetermined timing, decompresses the data by a

decompression method corresponding to the compression method,

and stores them in a volatile memory.